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september 2016 docid024569 rev 4 1 / 23 this is information on a product in full production. www.st.com STB13N60M2, std13n60m2 n - channel 600 v, 0.35 typ., 11 a mdmesh? m2 power mosfets in d 2 pak and dpak packages datasheet - production data figure 1 : internal schematic diagram features order code v ds @t jmax. r ds(on) max. i d STB13N60M2 650 v 0.38 11 a std13n60m2 ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener - protected applications ? switching applications description these devices are n - channel power mosfets developed using mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, these devices exhibit low on - resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency con verters. table 1: device summary order code marking package packing STB13N60M2 13n60m2 d 2 pak tape and reel std13n60m2 dpak d(2, t ab) g(1) s(3) am01476v1_tab
contents STB13N60M2, std13n60m2 2 / 23 docid024569 rev 4 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.2 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package mechanical data ................................ ............................. 10 4.1 d 2 pak (to - 263) type a package information ................................ . 10 4.2 dpa k (to - 252) type a2 package information ................................ . 13 4.3 dpak (to - 252) type c2 package information ................................ 16 4.4 d 2 pak and dpak packing information ................................ ........... 19 5 revision history ................................ ................................ ............ 22
STB13N60M2, std13n60m2 electrical ratings docid024569 rev 4 3 / 23 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t c = 25 c 11 a i d drain current (continuous) at t c = 100 c 7 a i dm (1) drain current (pulsed) 44 a p tot total dissipation at t c = 25 c 110 w dv/dt (2) peak diode recovery voltage slope 15 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 t stg storage temperature range - 55 to 150 c t j operating junction temperature range notes: (1) pulse width limited by safe operating area. (2) i sd 11 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd = 400 v. (3) v ds 480 v. table 3: thermal data symbol parameter value unit d 2 pak dpak r thj - case thermal resistance junction - case max. 1.14 c/w r thj - pcb (1) thermal resistance junction - pcb max. 30 50 notes: (1) when mounted on fr - 4 board of 1 inch2, 2 oz cu. table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax. ) 2.8 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar ; v dd = 50 v) 125 mj
electrical characteristics STB13N60M2, std13n60m2 4 / 23 docid024569 rev 4 2 electrical characteristics t c = 25 c unless otherwise specified table 5: on/off - states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero - gate voltage drain current v gs = 0 v, v ds = 600 v 1 a v gs = 0 v, v ds = 600 v, t c = 125 c (1) 100 a i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 5.5 a 0.35 0.38 notes: (1) defined by design, not subject to production test. table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 580 - pf c oss output capacitance - 32 - pf c rss reverse transfer capacitance - 1.1 - pf c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 120 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 6.6 - q g total gate charge v dd = 480 v, i d = 11 a, v gs = 10 v (see figure 17: "test circuit for gate charge behavior" ) - 17 - nc q gs gate - source charge - 2.5 - nc q gd gate - drain charge - 9 - nc notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss.
STB13N60M2, std13n60m2 electrical characteristics docid024569 rev 4 5 / 23 table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 5.5 a, r g = 4.7 , v gs = 10 v (see figure 16: "test circuit for resistive load switching times" and figure 21: "switching time waveform" ) - 11 - ns t r rise time - 10 - ns t d(off) turn - off - delay time - 41 - ns t f fall time - 9.5 - ns table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 11 a i sdm (1) source - drain current (pulsed) - 44 a v sd (2) forward on voltage v gs = 0 v, i sd = 11 a - 1.6 v t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s, v dd = 60 v (see figure 18: "test circuit for inductive load switching and diode recovery times" ) - 297 ns q rr reverse recovery charge - 2.8 c i rrm reverse recovery current - 18.5 a t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 18: "test circuit for inductive load switching and diode recovery times" ) - 394 ns q rr reverse recovery charge - 3.8 c i rrm reverse recovery current - 19 a notes: (1) pulse width is limited by safe operating area. (2) pulsed: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STB13N60M2, std13n60m2 6 / 23 docid024569 rev 4 2.2 electrical characteristics (curves) figure 2 : safe operating area for d 2 pak figure 3 : thermal impedance for d 2 pak figure 4 : safe operating area for dpak figure 5 : thermal impedance for dpak cg20930 t p z th = k r thj-c = t p / ? 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 k 10 -1 t p (s) ? = 0.5 = 0.2 = 0.1 = 0.01 = 0.02 = 0.05 single pulse z th = k r thj-c = t p / ? t p ?
STB13N60M2, std13n60m2 electrical characteristics docid024569 rev 4 7 / 23 figure 6 : output characteristics figure 7 : transfer characteristics figure 8 : normalized v (br)dss vs. temperature figure 9 : static drain - source on - resistance figure 10 : gate charge vs. gate - source voltage figu re 11 : capacitance variations
electrical characteristics STB13N60M2, std13n60m2 8 / 23 docid024569 rev 4 figure 12 : normalized gate threshold voltage vs. temperature figure 13 : normalized on - resistance vs. temperature figure 14 : source - drain diode forward characteristics figure 15 : output capacitance stored energy
STB13N60M2, std13n60m2 test circuits docid024569 rev 4 9 / 23 3 test circuits figure 16 : test circuit for resistive load switching times figure 17 : test circuit for gate charge behavior figure 18 : test circuit for inductive load switching and diode recovery times figure 19 : unclamped inductive load test circuit figure 20 : unclamped inductive waveform figure 21 : switching time waveform am01469v10 47 k 2.7 k 1 k i g = cons t 100 d.u. t . + pulse width v gs 2200 f v g v dd r l
package mechanical data STB13N60M2, std13n60m2 10 / 23 docid024569 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 d 2 pak (to - 263) type a pa ckage information figure 22 : d2pak (to - 263) type a package outline 0079457_a_rev22
STB13N60M2, std13n60m2 package mechanical data docid024569 rev 4 11 / 23 table 9: d2pak (to - 263) type a package mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r 0.4 v2 0 8
package mechanical data STB13N60M2, std13n60m2 12 / 23 docid024569 rev 4 figure 23 : d2pak (to - 263) type a recommended footprint (dimensions are in mm)
STB13N60M2, std13n60m2 package mechanical data docid024569 rev 4 13 / 23 4.2 dpak (to - 252) type a2 package information figure 24 : dpak (to - 252) type a2 package outline 0068772_type-a2_rev21
package mechanical data STB13N60M2, std13n60m2 14 / 23 docid024569 rev 4 table 10: dpak (to - 252) type a2 mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 4.95 5.10 5.25 e 6.40 6.60 e1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 h 9.35 10.10 l 1.00 1.50 l1 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r 0.20 v2 0 8
STB13N60M2, std13n60m2 packag e mechanical data docid024569 rev 4 15 / 23 figure 25 : dpak (to - 252) type a2 recommended footprint (dimensions are in mm)
package mechanical data STB13N60M2, std13n60m2 16 / 23 docid024569 rev 4 4.3 dpak (to - 252) type c2 package information figure 26 : dpak (to - 252) type c2 package outline
STB13N60M2, std13n60m2 package mechanical data docid024569 rev 4 17 / 23 table 11: dpak (to - 252) type c2 mechanical data dim. mm min. typ. max. a 2.20 2.30 2.38 a1 0.90 1.01 1.10 a2 0.00 0.10 b 0.72 0.85 b4 5.13 5.33 5.46 c 0.47 0.60 c2 0.47 0.60 d 6.00 6.10 6.20 d1 5.10 5.60 e 6.50 6.60 6.70 e1 5.20 5.50 e 2.186 2.286 2.386 h 9.80 10.10 10.40 l 1.40 1.50 1.70 l1 2.90 ref l2 0.90 1.25 l3 0.51 bsc l4 0.60 0.80 1.00 l6 1.80 bsc 1 5 7 9 2 5 7 9 v2 0 8
package mechanical data STB13N60M2, std13n60m2 18 / 23 docid024569 rev 4 figure 27 : dpak (to - 252) type c2 recommended footprint (dimensions are in mm) fp_0068772_21
STB13N60M2, std13n60m2 package mechan ical data docid024569 rev 4 19 / 23 4.4 d 2 pak and dpak packing information figure 28 : tape outline
package mechanical data STB13N60M2, std13n60m2 20 / 23 docid024569 rev 4 figure 29 : reel outline table 12: d2pak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base quantity 1000 p2 1.9 2.1 bulk quantity 1000 r 50 t 0.25 0.35 w 23.7 24.3
STB13N60M2, std13n60m2 package mechanical data docid024569 rev 4 21 / 23 table 13: dpak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r 40 t 0.25 0.35 w 15.7 16.3
revision history STB13N60M2, std13n60m2 22 / 23 docid024569 rev 4 5 revision history table 14: document revision history date revision changes 22 - apr - 2013 1 first release. 28 - jun - 2013 2 C document status promoted from preliminary data to production data - minor text changes 03 - mar - 2014 3 C updated: table 10 and table 25 - minor text changes 12 - sep - 2016 4 updated the title, features and the description. updated section 4.1: "d2pak (to - 263) type a package information" , section 4.2: "dpak (to - 252) type a2 package informati on" , section 4.3: "dpak (to - 252) type c2 package information" and section 4.4: "d2pak and dpak packing information" .
STB13N60M2, std13n60m2 docid024569 rev 4 23 / 23 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain th e latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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